Title :
Physics-based exact analytical drain current equation and optimized compact model for long channel MOS transistors
Author :
Jie, Bin ; Sah, Chih-Tang
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
Abstract :
An exact analytical formula of DC drain current versus gate and drain voltages is derived for MOS transistors with constant channel-impurity-concentration based on device physics. From this exact analytical formula, a compact model for long-channel MOS transistors is derived. The compact model is optimized over wide ranges of transistor properties by least-square-fit to numerical I-V data from the exact analytical formula. The optimized compact model has only one parameter to least-square-fit experimental data. The exact analytical formula and the compact model are verified numerically by I-V values calculated from the exact Pao-Sah double-integral formula.
Keywords :
MOSFET; least mean squares methods; semiconductor device models; I-V values; MOS transistor; Pao-Sah double-integral formula; compact model; constant channel-impurity-concentration; device physics; drain current equation; drain voltage; Circuit simulation; Data analysis; Electric variables; Electrons; Equations; MOSFET circuits; Numerical models; Solid modeling; Solid state circuits; Voltage;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1436661
