Physics-based exact analytical drain current equation and optimized compact model for long channel MOS transistors

Author

Jie, Bin ; Sah, Chih-Tang

Author_Institution

Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA

Volume

2

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

941

Abstract

An exact analytical formula of DC drain current versus gate and drain voltages is derived for MOS transistors with constant channel-impurity-concentration based on device physics. From this exact analytical formula, a compact model for long-channel MOS transistors is derived. The compact model is optimized over wide ranges of transistor properties by least-square-fit to numerical I-V data from the exact analytical formula. The optimized compact model has only one parameter to least-square-fit experimental data. The exact analytical formula and the compact model are verified numerically by I-V values calculated from the exact Pao-Sah double-integral formula.

Keywords

MOSFET; least mean squares methods; semiconductor device models; I-V values; MOS transistor; Pao-Sah double-integral formula; compact model; constant channel-impurity-concentration; device physics; drain current equation; drain voltage; Circuit simulation; Data analysis; Electric variables; Electrons; Equations; MOSFET circuits; Numerical models; Solid modeling; Solid state circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1436661

Filename

1436661