Theoretical approach of the photofield emission of a degenerate semiconductor

Author

Chbihi, A. ; Dupont, M. ; Gardès, J. ; Jaber, Z. ; Querrou, M.

Author_Institution

Lab. de Phys. Corpusculaire, Univ. Blaise Pascal, Aubiere, France

fYear

1996

fDate

7-12 Jul 1996

Firstpage

29

Lastpage

33

Abstract

In a high external electric field, a strong band bending confines the electron to a surface region. In the range of field (1-10 GV/m) most of the electrons close to the surface remain at the ground level E_o. The emitted current is numerically computed. The results show that the current saturation arises at higher fields. Matrix element that describes the photoexcitation of electrons is presented and photocurrent is calculated

Keywords

elemental semiconductors; ground states; high field effects; photoconductivity; photoemission; silicon; surface states; Si; band bending; current saturation; degenerate semiconductor; electron photoexcitation; emitted current; ground level; high external electric field; matrix element; photocurrent; photofield emission; surface confined electron; Anodes; Cathodes; Chemical analysis; Electron emission; Photoconductivity; Poisson equations; Potential energy; Space charge; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International

Conference_Location

St. Petersburg

Print_ISBN

0-7803-3594-5

Type

conf

DOI

10.1109/IVMC.1996.601767

Filename

601767