Title :
Theoretical approach of the photofield emission of a degenerate semiconductor
Author :
Chbihi, A. ; Dupont, M. ; Gardès, J. ; Jaber, Z. ; Querrou, M.
Author_Institution :
Lab. de Phys. Corpusculaire, Univ. Blaise Pascal, Aubiere, France
Abstract :
In a high external electric field, a strong band bending confines the electron to a surface region. In the range of field (1-10 GV/m) most of the electrons close to the surface remain at the ground level Eo . The emitted current is numerically computed. The results show that the current saturation arises at higher fields. Matrix element that describes the photoexcitation of electrons is presented and photocurrent is calculated
Keywords :
elemental semiconductors; ground states; high field effects; photoconductivity; photoemission; silicon; surface states; Si; band bending; current saturation; degenerate semiconductor; electron photoexcitation; emitted current; ground level; high external electric field; matrix element; photocurrent; photofield emission; surface confined electron; Anodes; Cathodes; Chemical analysis; Electron emission; Photoconductivity; Poisson equations; Potential energy; Space charge; Temperature; Voltage;
Conference_Titel :
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location :
St. Petersburg
Print_ISBN :
0-7803-3594-5
DOI :
10.1109/IVMC.1996.601767
