State-of-the-Art Inkjet-Printed Metal-Insulator-Metal (MIM) Capacitors on Silicon Substrate

Author

Mariotti, Chiara ; Cook, Benjamin S. ; Roselli, Luca ; Tentzeris, Manos M.

Author_Institution

Dept. of Eng., Univ. of Perugia, Perugia, Italy

Volume

25

Issue

1

fYear

2015

fDate

Jan. 2015

Firstpage

13

Lastpage

15

Abstract

Vertically-integrated metal-insulator-metal (MIM) capacitors on silicon are demonstrated for the first time utilizing an entirely additive RF-specific inkjet-printing process. The inkjet-printed MIM capacitors demonstrate a high capacitance per unit area of up to 33 pF/mm² by utilizing novel dielectric inks, while achieving quality factors (Q) up to 25 and self-resonant frequencies (SRFs) above 1 GHz. Measurements of dielectric permittivity, leakage current, voltage breakdown, and fabrication repeatability are presented confirming the high-performance operation of the printed MIM capacitors.

Keywords

MIM devices; Q-factor; elemental semiconductors; ink jet printing; leakage currents; permittivity; semiconductor device breakdown; silicon; thin film capacitors; MIM capacitors; Si; additive RF-specific inkjet-printing process; dielectric inks; dielectric permittivity measurement; fabrication repeatability; inkjet-printed metal-insulator-metal capacitors; leakage current; quality factors; self-resonant frequency; silicon substrate; thin-film capacitors; vertically-integrated metal-insulator-metal capacitors; voltage breakdown; Capacitors; Ink; MIM capacitors; Printing; Silicon; Substrates; Inkjet-printing; RF passives; printed electronics; silicon; thin-film capacitors;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2014.2365745

Filename

6949681