DocumentCode :
3286908
Title :
Application of spectral density of transitions in semiconductor laser theory
Author :
Noppe, M.G.
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk
fYear :
2006
fDate :
26-28 Sept. 2006
Firstpage :
47
Lastpage :
52
Abstract :
In this paper the formulas for spectral speed of an emission, for gain, for spectral - volume energy density of spontaneous radiation, for modulation of spontaneous radiation output power spectrum near to a threshold, based on formula for spectral density of transitions, are derived. The contrast modulation index mk was defined; using of mk determines more split-hair accuracy of definition |thetas| from experimental data.
Keywords :
laser theory; laser transitions; optical modulation; semiconductor lasers; spontaneous emission; contrast modulation index; semiconductor laser theory; spectral density; spectral-volume energy density; split-hair accuracy; spontaneous radiation; Charge carrier processes; Distribution functions; Frequency; Hair; Laser theory; Laser transitions; Modulation; Physics; Power generation; Semiconductor lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Instrument Engineering, 2006. APEIE '06. 8th International Conference on Actual Problems of
Conference_Location :
Novosibirsk
Print_ISBN :
5-7782-0662-3
Type :
conf
DOI :
10.1109/APEIE.2006.4292365
Filename :
4292365
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3286908
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