DocumentCode
3287049
Title
Modeling of the relaxation time of a ferroïc single crystal
Author
Ragheb, M. ; Renoud, R. ; Borderon, C. ; Gundel, H.W.
Author_Institution
IETR, LUNAM Univ., Nantes, France
fYear
2012
fDate
9-13 July 2012
Firstpage
1
Lastpage
3
Abstract
The application of an electrical field E or a mechanical stress σ on a ferroïc single crystal leads to the switching of the dipolar moments inducing the motion of domain walls. According to the approach that we have developed to model the movement of domain walls, we established a relationship between the dielectric (or the piezoelectric) properties and the applied constraints. In this model, we calculate the relaxation time which is the ratio between the restoring force and the friction force. On the other hand the dielectric constant ε and the piezoelectric coefficient d are generally considered as dependent with the relaxation time, so they are functions of the constraint. This result permits us to obtain the ε-E and d-E butterfly loops. This model is potentially applied when the constraint amplitudes E0 is higher than the coercive constraint Ec. Predictions of the model for single crystals are in well agreement with experimental data presented in literature.
Keywords
dielectric polarisation; electric domains; ferroelectric coercive field; ferroelectric materials; friction; permittivity; piezoelectricity; coercive constraint; d-E butterfly loops; dielectric constant; dielectric properties; domain walls; electrical field; ferroic single crystal; friction force; mechanical stress; piezoelectric coefficient; piezoelectric properties; relaxation time modeling; Crystals; Damping; Electric fields; Force; Permittivity; Stress; Relaxation time; dielectric and piezoelectric properties; domain wall motion;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics held jointly with 2012 European Conference on the Applications of Polar Dielectrics and 2012 International Symp Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials (ISAF/ECAPD/PFM), 2012 Intl Symp
Conference_Location
Aveiro
Print_ISBN
978-1-4673-2668-1
Type
conf
DOI
10.1109/ISAF.2012.6297826
Filename
6297826
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