Title :
Fabrication and electrical properties of 0.9PMN-0.1PT MIM capacitors
Author :
Leuliet, A. ; Jamond, N. ; Bisaro, R. ; Garry, G. ; Pham-Thi, M. ; Ziaei, A. ; Michalas, L. ; Koutsoureli, M. ; Papaioannou, G.
Author_Institution :
Thales Res. & Technol., Palaiseau, France
Abstract :
This paper describes the fabrication and characterization of 0.9PMN-0.1PT MIM capacitors with platinum electrodes. The films have been deposited by Pulsed Laser Deposition (PLD) on a buffer layer (SrRuO3) which has been demonstrated to be essential to enhance the growth of PMN-PT instead of pyrochlore. The temperature analysis of the current voltage characteristics revealed that the dc conductivity is interface controlled due to Schottky emission. The other important parameters determining the device current are magnitude, polarity and duration of the applied bias.
Keywords :
MIM devices; Schottky effect; electrical conductivity; electrodes; ferroelectric capacitors; ferroelectric thin films; ferroelectricity; lead compounds; magnesium compounds; platinum; pulsed laser deposition; thin film capacitors; (1-x)PbMg1/3Nb2/3O-xPbTiO3; MIM capacitors; PLD; PbMg0.33Nb0.67O-PbTiO3-Pt; Schottky emission; buffer layer; current voltage characteristics; dc conductivity; device current; electrical properties; ferroelectric films; platinum electrodes; polarity; pulsed laser deposition; pyrochlore; temperature analysis; Buffer layers; Current measurement; Electrodes; MIM capacitors; Platinum; Pulsed laser deposition; Temperature; 0.9PMN-0.1PT; PLD high k dielectric film; Schottky barrier;
Conference_Titel :
Applications of Ferroelectrics held jointly with 2012 European Conference on the Applications of Polar Dielectrics and 2012 International Symp Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials (ISAF/ECAPD/PFM), 2012 Intl Symp
Conference_Location :
Aveiro
Print_ISBN :
978-1-4673-2668-1
DOI :
10.1109/ISAF.2012.6297830
