Title :
Extended base H+-ion sensitive bipolar junction transistor with SnO2/ITO glass sensing membrane
Author :
Chen, Chung-Yuan ; Hsieh, Hsiu-Li ; Sun, Tai-Ping ; Ching, Congo Tak-Shing ; Liu, Po-Liang
Author_Institution :
Inst. of Electr. Eng., Nat. Chi Nan Univ., Nantou, Taiwan
Abstract :
In this study, an extended base bipolar junction transistor (EBBJT) as an H+ ion sensitive device have been investigated. The SnO2/ITO glass, fabricated by sputtering SnO2 on the conductive ITO glass, is used as a pH-sensitive membrane for electrode, which is connected with a commercial bipolar junction transistor (BJT) device. The experimental data show that this structure has a linear pH response, about 57-60 mV/pH in the ion concentration range between pH 2 and 10, and hysteresis effect is about 4.2 mV. The thermal stability of EBBJT has been validated by the experimental results on pH values ranging from 2 to 10 in a temperature range of 25°C to 55 °C. In addition, it is easier to fabricate and package the sensitive membrane structure and the measurement is simple for the application of disposable biosensor without complex temperature compensation.
Keywords :
bipolar transistors; indium compounds; membranes; pH measurement; thermal stability; tin compounds; BJT; H+ ion sensitive device; SnO2-ITO; SnO2/ITO glass sensing membrane; disposable biosensor application; extended base H+-ion sensitive bipolar junction transistor; linear pH response; pH-sensitive membrane; temperature 25 degC to 55 degC; thermal stability; Biomembranes; Electrodes; Glass; Hysteresis; Indium tin oxide; Packaging; Sputtering; Temperature distribution; Temperature sensors; Thermal stability;
Conference_Titel :
Sensors, 2009 IEEE
Conference_Location :
Christchurch
Print_ISBN :
978-1-4244-4548-6
Electronic_ISBN :
1930-0395
DOI :
10.1109/ICSENS.2009.5398571
