Bi-layered sensor structures (SnO2 film-CuO nanolayer) with improved response characteristics for H2S gas

Author

Verma, Manish ; Sreenivas, K. ; Gupta, Vinay ; Chowdhuri, Arijit

Author_Institution

Dept. of Phys. & Astrophys., Univ. of Delhi, Delhi, India

fYear

2009

fDate

25-28 Oct. 2009

Firstpage

1132

Lastpage

1134

Abstract

Two sensor structures (SnO₂ film, and SnO₂ film-CuO nanolayer) have been prepared in the present study using both rf sputtering and pulsed laser deposition (PLD) techniques for trace level detection of H₂S gas (20 ppm). The response characteristic of sensor structures based on bare SnO₂ thin film (90 nm) and after integrating with catalytic CuO nanolayer (10 nm) have been investigated and a comparative study has been carried out in detail. The bilayer sensor structures (SnO₂ film-CuO nanolayer) prepared by both techniques exhibits enhanced sensitivity in comparison to bare SnO₂ film sensor. PLD grown SnO₂-CuO bilayer structure shows maximum sensor response (~2.3Ã—10³) at a very low operating temperature of 100Â°C.

Keywords

catalysts; chemical variables measurement; copper compounds; gas sensors; hydrogen compounds; pulsed laser deposition; semiconductor materials; semiconductor thin films; sputter deposition; tin compounds; CuO; H₂S; SnO₂; bare film sensor; bilayered sensor structures; catalytic nanolayer; gas sensor; pulsed laser deposition; rf sputtering; temperature 100 degC; thin film; trace level detection; Gas detectors; Pulsed laser deposition; Roentgenium; Semiconductor films; Sensor phenomena and characterization; Sputtering; Substrates; Surface morphology; Temperature sensors; Thin film sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2009 IEEE

Conference_Location

Christchurch

ISSN

1930-0395

Print_ISBN

978-1-4244-4548-6

Electronic_ISBN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2009.5398576

Filename

5398576