DocumentCode
3287264
Title
Yield modeling based on circular defect size and a real defect rectangular degree
Author
Wang, Junping ; Hao, Yue ; Liu, Hongxia ; Jing, Minge
Author_Institution
Res. Inst. of Microelectron., Xidian Univ., Xian, China
Volume
2
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
1104
Abstract
In the prediction model of yield and critical area available, the defect outline is usually assumed as circular. But the observations of real defects exhibit a great variety of defect shapes. The yield and the critical area predictions made by Monte Carlo techniques are realized and the relationship between error of yield predictions by circular defects and the rectangular degree of the defect is simulated. A more accurate yield model that takes the real defect shapes into account is presented, which calibrates for inaccuracy in defect size by the circular outline.
Keywords
Monte Carlo methods; integrated circuit yield; Monte Carlo techniques; circular defect size; real defect rectangular degree; yield modeling; Circuit faults; Economic forecasting; Environmental economics; Integrated circuit modeling; Manufacturing; Microelectronics; Monte Carlo methods; Pollution measurement; Predictive models; Shape measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1436706
Filename
1436706
Link To Document