DocumentCode
3287485
Title
CMOS transistor mismatch model with temperature effect for HSPICE and SPECTRE
Author
Tan, Philip Beow Yew ; Kordesch, A.V. ; Sidek, Othman
Author_Institution
Silterra Malaysia Sdn. Bhd., Kedah, Malaysia
Volume
2
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
1139
Abstract
The purpose of this paper is to present a HSPICE and a SPECTRE models that are able to describe the temperature effect on CMOS transistor pair mismatch by adding a linear temperature dependent equation to the existing model. Here, we model the mismatch behavior of MOS transistor threshold voltage (Vt) and drain current (Id) at different temperatures 30, 90 and 120 degree C. At high temperature, the matching of both Vt and Id improve. This effect has been captured by including the temperature effect to the mismatch model.
Keywords
CMOS integrated circuits; MOSFET; SPICE; integrated circuit modelling; temperature; 120 C; 30 C; 90 C; CMOS transistor mismatch model; HSPICE; MOS transistor threshold voltage; SPECTRE; drain current; linear temperature dependent equation; temperature effect; Electrical resistance measurement; Equations; MOS devices; MOSFETs; Mathematical model; Plasma temperature; SPICE; Semiconductor device modeling; Threshold voltage; Tiles;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1436718
Filename
1436718
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