Recent advances in III-V nitride electron devices

Author

Khan, M.A. ; Chen, Q. ; Yang, J. ; Anwar, M.Z. ; Blasingame, M. ; Shur, M.S. ; Burm, J. ; Eastman, L.F.

Author_Institution

APA Opt. Inc., Blaine, MN, USA

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

27

Lastpage

30

Abstract

We review the performance and discuss the potential of GaN-based field effect transistors for high-power, high-temperature operation. Recent Monte Carlo simulations predict that GaN-based transistors operating at high voltages may outperform GaAs-based transistors even at room temperature. Our GaN/AlGaN doped channel HFETs (DC-HFETs) demonstrated highest frequency operation among all wide band gap semiconductor devices because of excellent transport properties of two dimensional electron gas at the AlGaN/GaN heterointerface and a large sheet carrier concentration in the device channel, with maximum frequency of oscillations above 100 GHz and cutoff frequency over 40 GHz.

Keywords

III-V semiconductors; Monte Carlo methods; aluminium compounds; gallium compounds; power field effect transistors; semiconductor device models; two-dimensional electron gas; wide band gap semiconductors; GaN-AlGaN; III-V nitride electron devices; III-V semiconductors; Monte Carlo simulations; cutoff frequency; device channel; doped channel HFETs; field effect transistors; high-power operation; high-temperature operation; maximum oscillation frequency; sheet carrier concentration; transport properties; two dimensional electron gas; wide band gap semiconductor devices; Aluminum gallium nitride; Cutoff frequency; Electron devices; FETs; Gallium nitride; HEMTs; III-V semiconductor materials; Temperature; Transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.553114

Filename

553114