Title :
Thickness and temperature dependent electrical characteristics of SrBi2Ta2O2 thin films prepared by pulsed laser ablation
Author :
Roy, A. ; Nath, M. ; Roy, N.
Author_Institution :
Dept. of Phys., Nat. Inst. of Technol. Silchar, Silchar, India
Abstract :
Polycrystalline SrBi2Ta2O9 (SBT) thin films have been prepared by pulsed laser ablation technique on platinum coated silicon substrate. The influence of growth temperature and thickness on microstructure and dielectric properties of films was studied. Crystallite size of SBT films has been found to increase with increasing substrate temperature. With increase of substrate temperature from 500 to 700°C, the dielectric constant gradually increases due to increase in the cystallinity and gain size. Thickness dependent dielectric constant has been studied and discussed in the light of an interfacial dead layer and the finite screening length of the electrode. The C-V measurement of the film deposited at 700°C exhibited butterfly-like curve, which is characteristics of ferroelectric nature of material. The frequency dependent dielectric constant and the dielectric loss of SBT films for various processing temperature was also studied.
Keywords :
bismuth compounds; capacitance; crystallites; dielectric losses; electrical conductivity; ferroelectric materials; ferroelectric thin films; grain size; permittivity; pulsed laser deposition; strontium compounds; C-V measurement; Pt-Si; SBT films; SrBi2Ta2O9; butterfly-like curve; crystallite size; cystallinity; dielectric loss; dielectric properties; electrode; ferroelectric nature; frequency dependent dielectric constant; grain size; growth temperature; interfacial dead layer; microstructure; platinum coated silicon substrate; polycrystalline thin films; processing temperature; pulsed laser ablation technique; screening length; substrate temperature; temperature 500 degC to 700 degC; temperature dependent electrical characteristics; thickness dependent dielectric constant; thickness dependent electrical characteristics; Capacitance; Capacitors; Dielectric constant; Films; Substrates; Temperature; dielectric constant; ferroelectric; pulsed laser ablation; thin films;
Conference_Titel :
Applications of Ferroelectrics held jointly with 2012 European Conference on the Applications of Polar Dielectrics and 2012 International Symp Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials (ISAF/ECAPD/PFM), 2012 Intl Symp
Conference_Location :
Aveiro
Print_ISBN :
978-1-4673-2668-1
DOI :
10.1109/ISAF.2012.6297861
