• DocumentCode
    3287895
  • Title

    Plasma Chemical Etching of Silicon

  • Author

    Bogomolov, B.K.

  • Author_Institution
    Novosibirsk State Tech. Univ., Novosibirsk
  • fYear
    2006
  • fDate
    26-28 Sept. 2006
  • Firstpage
    38
  • Lastpage
    39
  • Abstract
    The basic results of plasma etching of silicon in CCI2F2/O2 in quartz reactor with teflon polymer by a covering are considered. The uninconsistent model of plasma chemical of etching (PCE) of silicon in plasma CCl2F2/O2 in conditions of active delivery chemically active particles (CAP) is constructed at the expense of etching teflon polymer. The deep etching of silicon up to 180 mkm for 30 minutes is carried out. However anisotropy of deep etching of silicon low.
  • Keywords
    micromechanical devices; polymer films; silicon; sputter etching; Si; deep etching; microelectromechanical devices; plasma chemical etching; quartz reactor; silicon; teflon polymer; Anisotropic magnetoresistance; Chemical processes; Chemical technology; Etching; Microelectronics; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma temperature; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Instrument Engineering, 2006. APEIE '06. 8th International Conference on Actual Problems of
  • Conference_Location
    Novosibirsk
  • Print_ISBN
    5-7782-0662-3
  • Type

    conf

  • DOI
    10.1109/APEIE.2006.4292430
  • Filename
    4292430
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3287895