Title :
Three dimensional analytical subthreshold model for non-rectangular cross-section FinFETs
Author :
Wu, Xusheng ; Chen, Qiang ; Chan, Mansun ; Mansun Chan
Author_Institution :
Dept. of Electron. & Electr. Eng., Hong Kong Univ. of Sci. & Technol., China
Abstract :
The subthreshold characteristics of FinFET´s with non-rectangular fin cross-section are investigated using evanescent-mode analysis. A three-dimensional analytical subthreshold conduction model is developed by applying the superposition principle to a two-dimensional model for ideal rectangular structures. The results from the analytical model are compared to three-dimensional numerical device simulations with good agreement. The model can be used to predict fabrication technology requirement in the scaling of a realistic nano-scaled FinFETs.
Keywords :
field effect transistors; semiconductor device models; 3D analytical subthreshold model; analytical subthreshold conduction model; evanescent-mode analysis; ideal rectangular structures; nonrectangular cross-section FinFET; nonrectangular fin cross-section; superposition principle; Analytical models; CMOS technology; FinFETs; Geometry; MOSFET circuits; Predictive models; Semiconductor device modeling; Semiconductor process modeling; Shape; Subthreshold current;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1436740
