Lithography prospects for 0.18-/spl mu/m technology and beyond

Author

Okazaki, S.

Author_Institution

Semicond. Technol. Dev. Center, Hitachi Ltd., Tokyo, Japan

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

57

Lastpage

60

Abstract

The development of ULSIs has strongly depended on the evolution of lithographic technology. The minimum feature size of the most-advanced ULSIs has reached the resolution limit of conventional optical lithography. To overcome this situation, many approaches, including optical and non-optical lithographic technologies, have been intensively investigated This paper describes the current status and future prospects of the lithography for 0.18-/spl mu/m technology and beyond.

Keywords

ULSI; electron beam lithography; image resolution; integrated circuit technology; photolithography; technological forecasting; 0.18 mum; ULSI; X-ray lithography; critical dimension control; current status; electron beam lithography; future prospects; lithographic technology; minimum feature size; nonoptical lithographic technologies; optical lithographic technologies; overlay accuracy; resolution; throughput; Electron beams; Electron optics; Energy resolution; Industrial relations; Logic devices; Microprocessors; Optical devices; Random access memory; Ultra large scale integration; X-ray lithography;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.553121

Filename

553121