DocumentCode :
3288052
Title :
Analysis of Kinetic Phenomenon in Polysilicon (Part 3)
Author :
Moiseev, A. G.
fYear :
2006
fDate :
26-28 Sept. 2006
Firstpage :
262
Lastpage :
263
Keywords :
Charge carriers; Electromagnetic scattering; Inspection; Kinetic theory; Magnetic field measurement; Magnetic sensors; Optical scattering; Rayleigh scattering; Surface resistance; US Department of Energy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Instrument Engineering, 2006. APEIE '06. 8th International Conference on Actual Problems of
Conference_Location :
Novosibirsk, Russia
Print_ISBN :
5-7782-0662-3
Type :
conf
DOI :
10.1109/APEIE.2006.4292441
Filename :
4292441
Link To Document :
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