Modeling and analysis of SSN in silicon and glass interposers for 3D systems

Author

Biancun Xie ; Swaminathan, Madhavan

Author_Institution

Interconnect & Packaging Center, Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2012

fDate

21-24 Oct. 2012

Firstpage

268

Lastpage

271

Abstract

In this paper, an efficient hybrid modeling approach for power delivery network (PDN) with through-silicon vias (TSVs) for 3D systems is proposed. The proposed approach extends multi-layer finite difference method (M-FDM) to include TSVs by extracting their parasitic behavior using an integral equation based solver. Using the proposed modeling technique the power/signal integrity of PDN with TSVs/through-glass vias (TGVs) in lossy silicon interposer and low loss glass interposer is investigated and compared. The comparison indicates the benefits of using silicon interposer for high speed signaling.

Keywords

finite difference methods; glass; integral equations; silicon; three-dimensional integrated circuits; 3D systems; PDN; SSN; TGV; TSV; glass interposer; integral equation; multilayer finite difference method; power delivery network; silicon interposer; through-glass vias; through-silicon vias; Computational modeling; Couplings; Glass; Insertion loss; Mathematical model; Microstrip; Silicon; Power delivery network; coupling effects; simultaneous switching noise; through-silicon via (TSV);

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Performance of Electronic Packaging and Systems (EPEPS), 2012 IEEE 21st Conference on

Conference_Location

Tempe, AZ

Print_ISBN

978-1-4673-2539-4

Electronic_ISBN

978-1-4673-2537-0

Type

conf

DOI

10.1109/EPEPS.2012.6457893

Filename

6457893