A circuit model for a vertical vacuum microelectronic triode at high frequency

Author

Qin, Ming ; Huang, Qing-An ; Wei, Tong-Li

Author_Institution

Microelectron. Center, Southeast Univ., Nanjing, China

fYear

1996

fDate

7-12 Jul 1996

Firstpage

86

Lastpage

90

Abstract

A circuit model of conventional vacuum field emission triode amplifier is developed in this article. The parameters of components in this model are calculated or estimated. Depending on Y parameters, the power gain and the cut off frequency of this device are calculated. The result shows that the cut off frequency is proportional to the gain of device g_m and inversely proportional to grid-cathode capacitance C_gc and grid-anode capacitance C_ga. Comparing to the experiment result, the result in this article is in accord with the experiment

Keywords

equivalent circuits; triodes; vacuum microelectronics; Y parameters; circuit model; cut off frequency; grid-anode capacitance; grid-cathode capacitance; high frequency characteristics; power gain; vacuum field emission triode amplifier; vertical vacuum microelectronic triode; Anodes; Cathodes; Equivalent circuits; Frequency; Microelectronics; Microwave devices; Microwave technology; Parasitic capacitance; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International

Conference_Location

St. Petersburg

Print_ISBN

0-7803-3594-5

Type

conf

DOI

10.1109/IVMC.1996.601779

Filename

601779