Title :
Reduction of 3rd order intermodulation distortion through the use of a high pass transmission line implementation of “derivative superposition”, and through the use of channel doped HEMTS
Author :
Webster, D.R. ; Ataei, G.R. ; Assenov, A. ; Haigh, D.G. ; Thayne, I.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
Abstract :
This paper describes the implementation of an amplifier with low 3rd order intermodulation distortion by using a combination of “Derivative Superposition” and high pass lumped element transmission lines. Measured results of a surface mount component version of the circuit are given, showing suppression of 3rd order intermodulation distortion in the order of -20 dBm compared to that of a similar single HEMT circuit, together with improved gain compression performance at high input signal powers. We also examine the potential benefit of the use of Doped Channel HEMTs and estimate a potential reduction in 3rd order intermodulation distortion of 10 dB
Keywords :
intermodulation distortion; RF amplifiers; channel doped HEMTS; derivative superposition; gain compression performance; high pass transmission line implementation; input signal powers; surface mount component version; third order intermodulation distortion;
Conference_Titel :
Analog Signal Processing (Digest No: 1996/236), IEE Third one-day Colloquium on
Conference_Location :
Oxford
DOI :
10.1049/ic:19961259