DocumentCode
3288472
Title
Thin-film thermo-resistor radiation hardness experimental results
Author
Nikiforov, Alexander Y. ; Telets, Vitally A. ; Figurov, Valerie S.
Author_Institution
Specialized Electron. Syst., Moscow, Russia
fYear
1997
fDate
35635
Firstpage
41
Lastpage
43
Abstract
Radiation hardness tests of thin-film thermo-resistors were carried out in the temperature range of -60...+125°C with 1% accuracy. The total resistance deviations from initial values did not exceed 2% after the dose rate 2.7·1010 rad(Si)/s, total dose 1.8·105 rad(Si)/s and neutron flux 2.4·1012 n/cm2 irradiation
Keywords
X-ray effects; electric sensing devices; electron beam effects; electron device testing; gamma-ray effects; neutron effects; radiation hardening (electronics); temperature sensors; thermistors; thin film resistors; -60 to 120 C; NiMo-V; V; radiation hardness tests; thin-film thermo-resistors; Conductors; Dosimetry; Electrical resistance measurement; Error correction; Temperature control; Temperature dependence; Temperature distribution; Temperature measurement; Testing; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 1997 IEEE
Conference_Location
Snowmass Village, CO
Print_ISBN
0-7803-4061-2
Type
conf
DOI
10.1109/REDW.1997.629795
Filename
629795
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