Radiation hard bulk CMOS ROM dose rate upset: detailed analysis technique and results

Author

Nikiforov, Alexander Y. ; Guminov, Vladimir N. ; Telets, Vitally A.

Author_Institution

Specialized Electron. Syst., Moscow, Russia

fYear

1997

fDate

35635

Firstpage

44

Lastpage

47

Abstract

The detailed dose rate effects investigation of a Radiation Hard Bulk Complementary Metal-Oxide-Semiconductor Read Only Memory (CMOS ROM) family is performed with the “RADON-5E” pulsed laser simulator. The low-impedance probe technique is used to measure transient responses along the information path inside the chip. It is found that the ROM dose rate upset level is determined by the preamplifier´s upset level. The essential dependence of ROM upset duration on the operational frequency is obtained and analyzed

Keywords

CMOS memory circuits; failure analysis; integrated circuit reliability; integrated circuit testing; laser beam effects; radiation hardening (electronics); read-only storage; transient analysis; transient response; RADON-5E; ROM upset duration; dose rate effects; dose rate upset; low-impedance probe technique; operational frequency dependence; preamplifier upset level; pulsed laser simulator; radiation hard bulk CMOS ROM; transient response measurement; Analytical models; CMOS integrated circuits; Integrated circuit testing; Laser beams; Probes; Pulse amplifiers; Read only memory; Semiconductor device measurement; Semiconductor lasers; X-ray lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation Effects Data Workshop, 1997 IEEE

Conference_Location

Snowmass Village, CO

Print_ISBN

0-7803-4061-2

Type

conf

DOI

10.1109/REDW.1997.629796

Filename

629796