DocumentCode
3288648
Title
Investigation of non-independent single event upsets in the TAOS GVSC static RAM
Author
Hosken, Robert ; Koga, Rocky ; Wilson, Ben ; Marcelli, James ; Laird, Linden
Author_Institution
Aerosp. Corp., El Segundo, CA, USA
fYear
1997
fDate
35635
Firstpage
53
Lastpage
60
Abstract
Operation of the two TAOS Honeywell GVSC Flight Computers has been monitored over three years. SEUs in the Micron 32K×8 static RAM chips were characterized and some were found to have a common primary event
Keywords
CMOS memory circuits; SRAM chips; aerospace computing; ion beam effects; proton effects; radiation hardening (electronics); special purpose computers; 256 kbit; CMOS static RAM; Honeywell flight computers; Micron SRAM chips; TAOS GVSC SRAMs; nonindependent SEU; primary event; single event upsets; Aerospace engineering; Central Processing Unit; EPROM; Hardware; Military computing; Random access memory; Read-write memory; Single event transient; Single event upset; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 1997 IEEE
Conference_Location
Snowmass Village, CO
Print_ISBN
0-7803-4061-2
Type
conf
DOI
10.1109/REDW.1997.629798
Filename
629798
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