• DocumentCode
    3288664
  • Title

    Neutron single event effect test results for various SRAM memories

  • Author

    Thouvenot, Didier ; Trochet, Patrick ; Gaillard, Remi ; Desnoyers, Francois

  • Author_Institution
    Nucletudes, Les Ulis, France
  • fYear
    1997
  • fDate
    35635
  • Firstpage
    61
  • Lastpage
    66
  • Abstract
    This paper presents the results of a SEE neutron evaluation carried out on five SRAM types. Sensitivity to the power supply, test pattern and memory cell structures were investigated
  • Keywords
    CMOS memory circuits; SRAM chips; integrated circuit testing; neutron effects; SEE neutron evaluation; SEE test results; SRAM chips; memory cell structures; neutron single event effect; power supply sensitivity; test pattern sensitivity; Dosimetry; Neutrons; Power dissipation; Power supplies; Random access memory; Read-write memory; Single event upset; Testing; Thin film transistors; Writing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 1997 IEEE
  • Conference_Location
    Snowmass Village, CO
  • Print_ISBN
    0-7803-4061-2
  • Type

    conf

  • DOI
    10.1109/REDW.1997.629799
  • Filename
    629799
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3288664