Title :
Total ionizing dose effects on 64 Mb 3.3 V DRAMs
Author :
Lee, C.I. ; Nguyen, D.N. ; Johnston, A.H.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
64 Mb 3.3 V CMOS DRAMs from two different manufacturers were tested for total dose. Retention time, power supply current, and functionality were used to characterize device response. Burned-in devices failed functionally at lower total dose levels. Results showed that these scaled DRAMs are about twice as hard as older generation 16 Mb commercial DRAMs
Keywords :
CMOS memory circuits; DRAM chips; integrated circuit reliability; integrated circuit testing; radiation effects; 3.3 V; 64 Mbit; CMOS DRAMs; burned-in devices; device response; functionality; power supply current; retention time; total ionizing dose effects; Aerodynamics; Clocks; Current supplies; Energy consumption; Laboratories; Propulsion; Random access memory; Space technology; System testing; Temperature;
Conference_Titel :
Radiation Effects Data Workshop, 1997 IEEE
Conference_Location :
Snowmass Village, CO
Print_ISBN :
0-7803-4061-2
DOI :
10.1109/REDW.1997.629805
