Ionizing radiation response of an amorphous silicon based antifuse

The ionizing radiation response of Ti/W metal electrode amorphous silicon (α-Si) antifuses is examined. It is shown that the resistance of unprogrammed α-Si antifuses improve (i.e. increase resistance) with increasing radiation dose when irradiated with a positive 3 or 5 V bias. The resistance of unprogrammed α-Si antifuses irradiated with zero bias and the resistance of fully programmed antifuses are insensitive to total ionizing radiation dose. The radiation response of partially programmed antifuses (as programmed resistances between 2000 and 4000 Ω) is also examined