Radiation hardening of commercial CMOS processes through minimally invasive techniques

Author

Benedetto, J.M. ; Kerwin, D.B. ; Chaffee, J.

Author_Institution

UTMC Microelectron. Syst., Colorado Springs, CO, USA

fYear

1997

fDate

35635

Firstpage

105

Lastpage

109

Abstract

UTMC Microelectronic Systems has developed two minimally invasive radiation tolerant modules (RTMs) to harden a commercial CMOS process. The RTMs were successfully inserted into three commercial foundries. The results of UTMC´s hardening effort clearly demonstrate that a total dose hardness of between 100 to 500 krad (SiO₂) can be achieved on a commercial CMOS process without significantly altering the commercial flow. This hardness level is from an initial set of experiments. Response factors from this first set of experiments have been identified which, when fully optimized, may increase the final total dose hardness level significantly

Keywords

CMOS integrated circuits; integrated circuit technology; radiation hardening (electronics); 100 to 500 krad; CMOS process; SiO₂; UTMC Microelectronic Systems; commercial foundry; minimally invasive technique; radiation hardening; radiation tolerant module; response factor; total dose hardness; CMOS process; Fabrication; Foundries; Microelectronics; Minimally invasive surgery; Production; Radiation effects; Radiation hardening; Springs; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation Effects Data Workshop, 1997 IEEE

Conference_Location

Snowmass Village, CO

Print_ISBN

0-7803-4061-2

Type

conf

DOI

10.1109/REDW.1997.629807

Filename

629807