High efficiency 2 GHz power Si-MOSFET design under low supply voltage down to 1 V

Author

Ohguro, T. ; Saito, M. ; Morifuji, E. ; Murakami, K. ; Matsuzaki, K. ; Yoshitomi, T. ; Morimoto, T. ; Momose, H.S. ; Katsumata, Y. ; Iwai, H.

Author_Institution

Microelectron. Eng. Lab., Toshiba Corp., Kawasaki, Japan

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

83

Lastpage

86

Abstract

We have presented a design method of RF power Si-MOSFETs for low voltage and high power-added efficiency operation. It has been demonstrated that 0.2 /spl mu/m gate length Co-salicided Si MOSFETs can achieve high power-added efficiency of more than 50% at 2 GHz RF operation with sufficient breakdown voltage (V/sub dss/S) by choosing optimum gate oxide thickness and N/sup -/ extension impurity concentration. Especially, efficiency of more than 50% was confirmed under very low supply voltage of 1.0 V, as well as higher supply voltage such as 2 and 3 V. The small gate length Co salicided Si-MOSFET is a good candidate for low-voltage, high efficiency RF power circuits for 2 GHz operation.

Keywords

UHF field effect transistors; cobalt compounds; electric breakdown; elemental semiconductors; impurity distribution; power MOSFET; power field effect transistors; semiconductor device metallisation; silicon; 0.2 micron; 1 to 3 V; 2 GHz; 50 percent; Co-salicided MOSFET; CoSi/sub 2/-Si; N/sup -/ extension impurity concentration; RF power Si MOSFETs; UHF device; breakdown voltage; high power-added efficiency operation; low supply voltage; optimum gate oxide thickness; power MOSFET design; Design engineering; Design methodology; Electrodes; Gallium arsenide; Laboratories; Low voltage; MOSFETs; Microelectronics; Power engineering and energy; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.553127

Filename

553127