• DocumentCode
    3289003
  • Title

    The effects of nuclear radiation on P-channel CCD imagers

  • Author

    Spratt, J.P. ; Passenheim, B.C. ; Leadon, R.E.

  • Author_Institution
    Full Circle Res. Inc., San Marcos, CA, USA
  • fYear
    1997
  • fDate
    35635
  • Firstpage
    116
  • Lastpage
    121
  • Abstract
    Analysis of the relationship between the Charge Transfer Efficiency (CTE) and dark current of CCD imagers, and the defects introduced into silicon by displacement damage, led to the prediction that P-channel CCDs would be more radiation hard than conventional N-channel CCDs. Proton and Co60 testing of 1024×640 P-channel CCD imagers confirmed this prediction, showing significant reduction in CTE degradation compared to N-channel devices. Also, dark current data shows that “hot pixel” generation is significantly reduced in these devices
  • Keywords
    CCD image sensors; gamma-ray effects; proton effects; radiation hardening (electronics); Co60 irradiation; P-channel CCD imager; Si; charge transfer efficiency; dark current; defects; displacement damage; hot pixel generation; nuclear radiation effect; proton irradiation; radiation hardness; silicon; Charge coupled devices; Charge transfer; Clocks; Dark current; Electrodes; Electron traps; Image analysis; Protons; Silicon; Space technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 1997 IEEE
  • Conference_Location
    Snowmass Village, CO
  • Print_ISBN
    0-7803-4061-2
  • Type

    conf

  • DOI
    10.1109/REDW.1997.629809
  • Filename
    629809
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3289003