Ge/Si avalanche photodetectors with high gain-bandwidth product

Author

Ning Duan ; Tsung-Yang Liow ; Lim, Andy Eu-Jin ; Lo, G.Q.

Author_Institution

Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore

fYear

2012

fDate

13-16 Dec. 2012

Firstpage

1

Lastpage

4

Abstract

We report a normal incidence Ge/Si avalanche photodiode with separate-absorption-charge-multiplication (SACM) structure by selective epitaxial growth. By proper design of charge and multiplication layers and by optimizing the electric field distribution in the depletion region to eliminate germanium impact-ionization at high gain, a high gain-bandwidth product of 310 GHz has been achieved at 1550 nm.

Keywords

absorption; avalanche photodiodes; elemental semiconductors; epitaxial growth; germanium; impact ionisation; photodetectors; silicon; submillimetre wave detectors; terahertz wave detectors; Ge-Si; SACM structure; avalanche photodetector; avalanche photodiode; bandwidth 310 GHz; charge layer; depletion region; electric field distribution optimization; germanium impact-ionization elimination; high gain-bandwidth product; multiplication layer; selective epitaxial growth; separate-absorption-charge-multiplication structure; size 1550 nm; Bandwidth; Germanium; Junctions; Silicon; Avalanche photodiodes; Fiber Optics Communication; Photodetectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics Global Conference (PGC), 2012

Conference_Location

Singapore

Print_ISBN

978-1-4673-2513-4

Type

conf

DOI

10.1109/PGC.2012.6457931

Filename

6457931