Title :
High performance silicon LDMOS technology for 2 GHz RF power amplifier applications
Author :
Wood, A. ; Dragon, C. ; Burger, W.
Author_Institution :
Div. of Radio Frequency Semicond., Motorola Inc., Phoenix, AZ, USA
Abstract :
The structure, device processing and performance of a 2 GHz, 60 Watt silicon LDMOS RF power transistor are described. At 2 GHz with a 26 Vdc drain operating voltage this device has 1 dB power gain compression at 63 Watts CW and 44% drain efficiency. Under two-tone test conditions, at 60 Watts peak output, 11.2 dB power gain is realized with less than -30 dBc intermodulation distortion and greater than 30% drain efficiency. Excellent linearity is maintained over a wide dynamic range.
Keywords :
UHF field effect transistors; UHF power amplifiers; elemental semiconductors; intermodulation distortion; power MOSFET; power field effect transistors; silicon; 11.2 dB; 2 GHz; 26 V; 30 to 44 percent; 60 to 63 W; LDMOS RF power transistor; RF power amplifier applications; Si; Si LDMOS technology; UHF; drain efficiency; linearity; wide dynamic range; Gain; High power amplifiers; Intermodulation distortion; Linearity; Power transistors; Radio frequency; Radiofrequency amplifiers; Silicon; Testing; Voltage;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553128
