Title :
A sealed cavity TFR process for RF bandpass filters
Author :
Lutsky, J.J. ; Naik, R.S. ; Reif, R. ; Sodini, C.G.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
Abstract :
Thin film bulk acoustic wave resonators (TFRs) show considerable promise as a silicon compatible integrated solution for RF bandpass filters with center frequencies in the 1-2 GHz range. This paper presents a VLSI compatible sealed cavity TFR process using reactively sputtered AlN as the piezoelectric film. The devices are free-standing and have a fundamental longitudinal resonance at 1.36 GHz with an insertion loss of 3.5 dB, a K/sub eff//sup 2/ of .4 %, and a Q/sub series/ of 210.
Keywords :
UHF filters; UHF integrated circuits; VLSI; acoustic resonator filters; band-pass filters; bulk acoustic wave devices; cavity resonators; etching; integrated circuit technology; membranes; micromachining; passive filters; piezoelectric thin films; sputter deposition; thin film devices; 1 to 2 GHz; 1.36 GHz; 3.5 dB; AlN; AlSi; RF bandpass filters; Si; UHF IC applications; VLSI compatible process; bulk acoustic wave resonators; insertion loss; piezoelectric film; reactively sputtered AlN; sealed cavity TFR process; thin film BAW resonators; Acoustic waves; Band pass filters; Insertion loss; Piezoelectric films; Radio frequency; Resonance; Semiconductor thin films; Silicon; Sputtering; Very large scale integration;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553130
