DocumentCode
3289567
Title
Monolithic spiral inductors fabricated using a VLSI Cu-damascene interconnect technology and low-loss substrates
Author
Burghartz, J.N. ; Edelstein, D.C. ; Jenkins, K.A. ; Jahnes, C. ; Uzoh, C. ; O´Sullivan, E.J. ; Chan, K.K. ; Soyuer, M. ; Roper, P. ; Cordes, S.
Author_Institution
Res. Div., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
1996
fDate
8-11 Dec. 1996
Firstpage
99
Lastpage
102
Abstract
This paper presents spiral inductor structures optimized in a Cu-damascene VLSI interconnect technology with use of silicon, high-resistivity silicon (HRS), or sapphire substrates. Quality factors (Q) of 40 at 5.8 GHz for a 1.4 nH-inductor and 13 at 600 MHz for a 80 nH-inductor have been achieved.
Keywords
MMIC; Q-factor; UHF integrated circuits; VLSI; copper; inductors; integrated circuit interconnections; sapphire; silicon; 600 MHz to 5.8 GHz; Al/sub 2/O/sub 3/; Cu-SiO/sub 2/; Si; UHF IC application; VLSI Cu-damascene interconnect technology; high-resistivity Si substrates; low-loss substrates; monolithic spiral inductors; quality factors; sapphire substrates; Coils; Copper; Fabrication; Inductors; Isolation technology; Silicon on insulator technology; Spirals; Substrates; Testing; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-3393-4
Type
conf
DOI
10.1109/IEDM.1996.553131
Filename
553131
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