DocumentCode
3289705
Title
Pad characterization for CMOS technology using time domain reflectometry
Author
Chiu, C.S. ; Chen, W.L. ; Liao, K.H. ; Chen, B.Y. ; Teng, Y.M. ; Huang, G.W. ; Wu, L.K.
fYear
2008
fDate
2-4 Dec. 2008
Firstpage
215
Lastpage
217
Abstract
The pad structure of CMOS technology is characterized by way of time domain reflectometry measurement. Using the on-wafer TDR measurement system, the capacitance of the pad in the CMOS process was extracted and estimated. Measured and simulated TDR data are also presented in this study. The capacitance is estimated when the curve is fitted by mathematical tool. This method is simple to use, and furthermore the results agree with data extracted from vector network analyzer.
Keywords
CMOS integrated circuits; curve fitting; network analysers; time-domain reflectometry; CMOS technology; capacitance; curve fitting; data extraction; mathematical tool; on-wafer TDR measurement system; pad characterization; time domain reflectometry measurement; vector network analyzer; CMOS technology; Reflectometry; Capacitance; Impedance; On-wafer; Pad structure; Time domain reflectometry (TDR);
fLanguage
English
Publisher
ieee
Conference_Titel
RF and Microwave Conference, 2008. RFM 2008. IEEE International
Conference_Location
Kuala Lumpur
Print_ISBN
978-1-4244-2866-3
Electronic_ISBN
978-1-4244-2867-0
Type
conf
DOI
10.1109/RFM.2008.4897398
Filename
4897398
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