Title :
A Si2Sb2Te5 phase change memory featuring 27F2 cell size and ultra low writing current
Author :
Yifeng, Chen ; Song Zhitang ; Xiaogang, Chen ; Liu Bo
Author_Institution :
State Key Lab. of Functional Mater. for Inf., Lab. of Nanotechnol., Chinese Acad. of Sci., Shanghai, China
Abstract :
A fully functional phase change memory (PCM) was fabricated and demonstrated that enables ultra low 0.3mA SET and 0.5mA RESET writing currents through a tungsten bottom electrode contact (BEC) with diameter of 90nm. This was achieved by integrating Si2Sb2Te5 (SST) storage material into 0.13um standard CMOS technology and resulted from the high electrical resistances of the novel chalcogenide both in amorphous and crystalline state, which contribute greatly to the improved efficiency of heating process during both RESET and SET operation.
Keywords :
CMOS integrated circuits; antimony compounds; phase change memories; silicon compounds; RESET writing currents; Si2Sb2Te5; amorphous state; bottom electrode contact; crystalline state; current 0.3 mA; current 0.5 mA; heating process; high electrical resistances; phase change memory; size 0.13 mum; size 90 nm; standard CMOS technology; standard technology; ultra low SET; ultra low writing current; Electrodes; Phase change materials; Phase change memory; Programming; Resistance; Writing; PCM; Si2Sb2Te5; writing current;
Conference_Titel :
Electric Information and Control Engineering (ICEICE), 2011 International Conference on
Conference_Location :
Wuhan
Print_ISBN :
978-1-4244-8036-4
DOI :
10.1109/ICEICE.2011.5778125
