Identifying semiconductors by D.C. ionization conductivity

Author

Derenzo, Stephen E. ; Bourret-Courchesne, Edith ; James, Floyd J. ; Klintenberg, Mattias K. ; Porter-Chapman, Yetta ; Wang, Jie ; Weber, Marvin J.

Author_Institution

Div. of Life Sci., Lawrence Berkeley Nat. Lab., CA

Volume

2

fYear

2005

fDate

23-29 Oct. 2005

Firstpage

1132

Lastpage

1134

Abstract

We describe a method for identifying semiconductor radiation detector materials based on the mobility of internally generated electrons and holes. It was designed for the early stages of exploration, when samples are not available as single crystals, but as crystalline powders. Samples are confined under pressure in an electric field and semiconductors are identified by an increase in d.c. conductivity during exposure to a high-intensity source of ⁶⁰Co gamma rays. Using this method, we have determined that BiOI, PbIF, BiPbO₂Cl, BiPbO₂Br, BiPbO₂I, Bi₂GdO₄Cl, Pb₃O₂I₂, and Pb₅O₄I₂ are semiconductors

Keywords

gamma-ray effects; ionisation; radiation detection; semiconductor counters; Bi₂GdO₄Cl; BiOI; BiPbO₂Br; BiPbO₂Cl; BiPbO₂I; D.C. ionization conductivity; Pb₃O₂I₂; Pb₅O₄I₂; PbIF; crystalline powders; electric field; electron mobility; high-intensity ⁶⁰Co gamma ray source; hole mobility; semiconductor radiation detector materials; Charge carrier processes; Conducting materials; Conductivity; Crystalline materials; Crystallization; Electron mobility; Ionization; Powders; Semiconductor materials; Semiconductor radiation detectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2005 IEEE

Conference_Location

Fajardo

ISSN

1095-7863

Print_ISBN

0-7803-9221-3

Type

conf

DOI

10.1109/NSSMIC.2005.1596450

Filename

1596450