Title :
Analysis and design of a FET-PIN-FET attenuator
Author :
Moradi, G. ; Abdipour, A. ; Shabani, A.
Author_Institution :
Electr. Eng. Dept., Amirkabir Univ. of Technol., Tehran
Abstract :
This paper describes the implementation of a hybrid attenuator which is made by combination of field effect transistors and PIN diodes. The performance of this structure can be better than the characteristics of classical PIN attenuators and those of FET attenuators. The developed circuit can be used as a key element in AGCs.
Keywords :
attenuators; automatic gain control; microwave diodes; microwave field effect transistors; p-i-n diodes; AGC; PIN diodes; field effect transistors; hybrid FET-PIN-FET attenuator; microwave systems; Attenuation; Attenuators; Circuit simulation; Conference proceedings; Linearity; Microwave FETs; Optical amplifiers; Radio frequency; Resistors; Solid state circuits; FET attenuators; Microwave attenuators; PIN diode;
Conference_Titel :
RF and Microwave Conference, 2008. RFM 2008. IEEE International
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-2866-3
Electronic_ISBN :
978-1-4244-2867-0
DOI :
10.1109/RFM.2008.4897419
