Title :
High efficiency 600-mW pHEMT balance amplifier design with load pull technique
Author :
Anand, Lokesh ; Kumar, Narendra ; Pragash, Sangaran ; Ain, M.F. ; Hassan, S.I.S.
Author_Institution :
Eng. Campus, Univ. of Sci. Malaysia, Minden
Abstract :
This paper provides suitable design method to achieve high efficiency of single balanced amplifier based on load pull technique. The device technology is using pseudomorphic High Mobility Electron Transistor (pHEMT) having gate-width of 6400-mum. Power-aided-efficiency (PAE) of 60-70 %, output power of 1 W and gain of 14 dB for the entire range 1-1.5 GHz is achieved at simulation level. Degradation of 30 % of PAE, 4 mW of output power and 5 dB of gain have been experienced at measurement level.
Keywords :
power HEMT; power amplifiers; frequency 1 GHz to 1.5 GHz; load pull technique; pHEMT balance amplifier design; power 1 W; power 4 mW; power 600 mW; power-aided-efficiency; pseudomorphic high mobility electron transistor; Design methodology; Gain; Impedance matching; Mirrors; PHEMTs; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Voltage;
Conference_Titel :
RF and Microwave Conference, 2008. RFM 2008. IEEE International
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-2866-3
Electronic_ISBN :
978-1-4244-2867-0
DOI :
10.1109/RFM.2008.4897432
