Title :
BESS: a source structure that fully suppresses the floating body effects in SOI CMOSFETs
Author :
Horiuchi, M. ; Tamura, M.
Author_Institution :
Central Res. Labs., Hitachi Ltd., Tokyo, Japan
Abstract :
The floating body effects in SOI CMOSFETs are fully suppressed by a bipolar embedded source structure (BESS) just beneath the n/sup +/ source junction. In this structure, a recombination center, or collector, is formed based on the solid-phase epitaxial mechanism of the Si-implanted SOI layer. The source-drain breakdown voltage of a device with this structure is the same as that of a bulk device, but with a remarkable improvement in the drain-induced barrier-lowering properties.
Keywords :
MOSFET; electron-hole recombination; semiconductor device models; semiconductor device reliability; silicon-on-insulator; solid phase epitaxial growth; BESS; SOI CMOSFETs; drain-induced barrier-lowering properties; floating body effects; recombination center; solid-phase epitaxial mechanism; source structure; Annealing; CMOS technology; CMOSFETs; Capacitance; Circuits; Degradation; Diodes; Fabrication; Isolation technology; Leakage current;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553136
