Title :
Design of ultra-low voltage op amp based on quasi-floating gate transistors
Author :
Ren, Le-Ning ; Zhu, Zhang-ming ; Yang, Yin-tang
Author_Institution :
Inst. of Microelectron., Xidian Univ., China
Abstract :
The fundamental principle of quasi-floating gate (QFG) MOS transistors, along with the electrical characteristics and equivalent circuits, are discussed. Based on the PMOS quasi-floating gate transistors, an ultra-low voltage operational amplifier is proposed. With a single power supply of 0.8V, the maximal open-loop gain of the amplifier is 76.5dB, the phase margin is 62° and the unit gain-bandwidth is 2.98MHz with 9.45μW power dissipation.
Keywords :
MOSFET; equivalent circuits; low-power electronics; operational amplifiers; 0.8 V; 2.98 MHz; 76.5 dB; 9.45 muW; MOS transistors; PMOS; electrical characteristics; equivalent circuits; quasifloating gate transistors; ultra-low voltage operational amplifier; CMOS technology; Capacitance; Coupling circuits; Equivalent circuits; Integrated circuit technology; Low voltage; MOSFET circuits; Operational amplifiers; Resistors; Threshold voltage;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1436877
