• DocumentCode
    3290580
  • Title

    Role of surface states in field emission from silicon

  • Author

    Huang, Qing-An

  • Author_Institution
    Microelectron. Center, Southeast Univ., Nanjing, China
  • fYear
    1996
  • fDate
    7-12 Jul 1996
  • Firstpage
    149
  • Lastpage
    154
  • Abstract
    Field emission from surface states is modelled and numerically estimated. Field emission current from surface states is dominant at lower fields while field emission current from the conduction band is dominant at higher fields due to insufficient electrons supplied for surface states
  • Keywords
    electron field emission; elemental semiconductors; silicon; space charge; surface states; vacuum microelectronics; Si; conduction band; field emission current; surface states; Charge carrier processes; Electron emission; Impurities; Microelectronics; Poisson equations; Silicon; Space charge; State estimation; Surface cleaning; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
  • Conference_Location
    St. Petersburg
  • Print_ISBN
    0-7803-3594-5
  • Type

    conf

  • DOI
    10.1109/IVMC.1996.601794
  • Filename
    601794
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3290580