DocumentCode :
3290755
Title :
Optimization Of Tilt-implanted Punchthrough Stopper On Short-channel Behavior In Quarter-micron Mosfet With Low-concentration Wells
Author :
Lin, Chih-Hsien ; Yang, Jiunn-Jer ; Young, Konrad ; Chiu, Kuang-Yi
fYear :
1997
fDate :
3-5 June 1997
Firstpage :
303
Lastpage :
306
Keywords :
Degradation; Doping; Electronics industry; Implants; Industrial electronics; Leakage current; MOS devices; MOSFET circuits; Optimization methods; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications, 1997. Proceedings of Technical Papers. 1997 International Symposium on
Conference_Location :
Taipei, Taiwan
ISSN :
1524-766X
Print_ISBN :
0-7803-4131-7
Type :
conf
DOI :
10.1109/VTSA.1997.614915
Filename :
614915
Link To Document :
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