Low-frequency noise dependence of TFSOI BiCMOS for low power RF mixed-mode applications

Author

Babcock, J.A. ; Huang, W.M. ; Ford, J.M. ; Ngo, D. ; Spooner, D.J. ; Cheng, S.

Author_Institution

Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

133

Lastpage

136

Abstract

Low-frequency (1/f) noise has been characterized for the first time in TFSOI BiCMOS devices designed for low power high frequency applications. In the bipolar transistors, 1/f noise obeyed a square law dependence on base current and was proportional to the inverse of the area. Aside from the expected 1/f noise, we have also observed a bias dependent generation-recombination (G/R) noise component in a small portion of these TFSOI BJTs. The 1/f noise in the near-fully-depleted MOSFETs was found to be bias independent in both the linear and saturation region of operation. However, when operated in the subthreshold regime, extraneous generation-recombination (G/R) noise becomes apparent.

Keywords

1/f noise; BiCMOS integrated circuits; MMIC; UHF integrated circuits; integrated circuit noise; mixed analogue-digital integrated circuits; silicon-on-insulator; 1/f noise; BJT; TFSOI BiCMOS; base current; bias dependent generation-recombination; extraneous generation-recombination noise; linear region; low power RF mixed-mode applications; low-frequency noise dependence; near-fully-depleted MOSFET; saturation region; square law dependence; BiCMOS integrated circuits; Bipolar transistors; Low-frequency noise; MOSFET circuits; Manufacturing processes; Microwave devices; Noise generators; Noise measurement; Radio frequency; Semiconductor device noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.553139

Filename

553139