Sub-millimeter wave InP technologies and integration techniques

Author

Radisic, Vesna ; Leong, Kevin M. K. H. ; Scott, Dennis W. ; Monier, Cedric ; Mei, X.B. ; Deal, William R. ; Gutierrez-Aitken, Augusto

Author_Institution

Northrop Grumman Aerosp. Syst., Redondo Beach, CA, USA

fYear

2015

fDate

17-22 May 2015

Firstpage

1

Lastpage

4

Abstract

In this work, we describe recent advances in InP HEMT and InP HBT technologies that have led to circuits approaching 1 THz. At lower frequencies, these technologies have demonstrated record performance in terms of noise figure (NF), output power, or power-added efficiency (PAE). On the other hand, CMOS-based technologies are dominating semiconductor industry, because they offer high complexity, yield, and integration density. Recent advances in heterogeneous integration enable the combination of compound semiconductor device technologies with CMOS to create complex, compact, and low weight future systems.

Keywords

III-V semiconductors; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; submillimetre wave devices; HBT; HEMT; InP; compound semiconductor device technologies; heterogeneous integration; integration techniques; sub-millimeter wave; CMOS integrated circuits; HEMTs; III-V semiconductor materials; Indium phosphide; Logic gates; Noise measurement; Packaging; Amplifier; HBT; HEMT; MMIC; integration; sub-millimeter wave;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2015 IEEE MTT-S International

Conference_Location

Phoenix, AZ

Type

conf

DOI

10.1109/MWSYM.2015.7167151

Filename

7167151