Title :
Sub-millimeter wave InP technologies and integration techniques
Author :
Radisic, Vesna ; Leong, Kevin M. K. H. ; Scott, Dennis W. ; Monier, Cedric ; Mei, X.B. ; Deal, William R. ; Gutierrez-Aitken, Augusto
Author_Institution :
Northrop Grumman Aerosp. Syst., Redondo Beach, CA, USA
Abstract :
In this work, we describe recent advances in InP HEMT and InP HBT technologies that have led to circuits approaching 1 THz. At lower frequencies, these technologies have demonstrated record performance in terms of noise figure (NF), output power, or power-added efficiency (PAE). On the other hand, CMOS-based technologies are dominating semiconductor industry, because they offer high complexity, yield, and integration density. Recent advances in heterogeneous integration enable the combination of compound semiconductor device technologies with CMOS to create complex, compact, and low weight future systems.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; submillimetre wave devices; HBT; HEMT; InP; compound semiconductor device technologies; heterogeneous integration; integration techniques; sub-millimeter wave; CMOS integrated circuits; HEMTs; III-V semiconductor materials; Indium phosphide; Logic gates; Noise measurement; Packaging; Amplifier; HBT; HEMT; MMIC; integration; sub-millimeter wave;
Conference_Titel :
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location :
Phoenix, AZ
DOI :
10.1109/MWSYM.2015.7167151
