Low-Temperature Process for Manufacturing All Polymer Thin-Film Transistors

We report a low-temperature process to manufacture an all polymer thin-film transistor avoiding curing and annealing temperatures higher than 80°C. This aspect of energy efficiency directly supports the low-cost feature of organic devices in fabrication. The process is being demonstrated by using commercially available polymers such as poly(ethylenedioxythiophene)/polystyrenesulfonate dispersion representing the source, drain and gate electrode, Norland optical adhesive NOA 75 as the gate-dielectric and regioregular poly(3-hexylthiophene-2,5-diyl) as the semiconducting polymer - all on a polyvinyl chloride substrate. Functional devices with a channel length of 25 μm and a channel width of 1 mm to 5 mm have been realized.