The effect of aging process on the parameters of a thin film optoelectronic NAND logical gate

Author

Porada, Zbigniew

Author_Institution

Institute of Electrical Engineering and Automatics (E-3), Technical University of Cracow, Warszawska 24, 31-155 Kraków, Poland. (tel: + 48-012-6282639, e-mail: zporada@op.pl)

fYear

2005

fDate

23-26 Oct. 2005

Firstpage

200

Lastpage

203

Abstract

An optoelectronic logical gate NAND composed of thin film photoconductive (PC) and electroluminescent (EL) elements. In the system was supplied with sinusoidal voltage with equal values of amplitude and frequency. The input signals were two rectangular light pulses, illuminating the respective photoconductive elements, and the output signal was the luminance of the electro-luminescent cell. The process of natural aging, which caused changes in parameters of PC elements, influenced also the changes in characteristics of the system composed of these elements. For EL element subjected to aging in normal conditions without applied voltage, the luminance of the light was lower by about 20% than for element immediately after their preparation. A variation of the parameters of PC and EL elements by the aging process caused then a decrease of the signal on the output of NAND gate and also an increase in the lag of the output signal in relation to the input signal.

Keywords

Photoconductive elements; ageing process; electroluminescent element; logical gates; Aging; Circuits; Electroluminescence; Electroluminescent devices; Equations; Mathematical model; Photoconductivity; Signal processing; Transistors; Voltage; Photoconductive elements; ageing process; electroluminescent element; logical gates;

fLanguage

English

Publisher

ieee

Conference_Titel

Polymers and Adhesives in Microelectronics and Photonics, Polytronic, 2005. Polytronic 2005. 5th International Conference on

Print_ISBN

0-7803-9553-0

Type

conf

DOI

10.1109/POLYTR.2005.1596519

Filename

1596519