Title :
Field emission properties of Si layers deposited on W tip
Author :
Chubun, N.N. ; Golubev, O.L. ; Djubua, B.Ch. ; Shrednik, V.N.
Author_Institution :
SRPS Istok, Fryasino, Russia
Abstract :
Field electron microscope was used for investigation of change of Si deposit on W tip as result of action of some field emission current. Two kinds of deposit have been prepared: 10 monoatomic layers on the W tip deposited at room temperature and the same layer of Si on the top deposited at 620 K. Then field emission current of a certain value took place for a certain time. Changes in field emission images of the deposit and in emission parameters of the surface have been observed and registered. The results of such treatment of the surface and of measuring are presented and discussed
Keywords :
electron field emission; field emission electron microscopy; silicon; tungsten; 300 K; 620 K; Si; Si layer; W; W tip; field electron microscopy; field emission; surface imaging; Cathodes; Conducting materials; Crystalline materials; Degradation; Electron emission; Electron microscopy; Pollution measurement; Silicon; Surface treatment; Temperature;
Conference_Titel :
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location :
St. Petersburg
Print_ISBN :
0-7803-3594-5
DOI :
10.1109/IVMC.1996.601799
