• DocumentCode
    3291237
  • Title

    Field emission properties of Si layers deposited on W tip

  • Author

    Chubun, N.N. ; Golubev, O.L. ; Djubua, B.Ch. ; Shrednik, V.N.

  • Author_Institution
    SRPS Istok, Fryasino, Russia
  • fYear
    1996
  • fDate
    7-12 Jul 1996
  • Firstpage
    170
  • Lastpage
    173
  • Abstract
    Field electron microscope was used for investigation of change of Si deposit on W tip as result of action of some field emission current. Two kinds of deposit have been prepared: 10 monoatomic layers on the W tip deposited at room temperature and the same layer of Si on the top deposited at 620 K. Then field emission current of a certain value took place for a certain time. Changes in field emission images of the deposit and in emission parameters of the surface have been observed and registered. The results of such treatment of the surface and of measuring are presented and discussed
  • Keywords
    electron field emission; field emission electron microscopy; silicon; tungsten; 300 K; 620 K; Si; Si layer; W; W tip; field electron microscopy; field emission; surface imaging; Cathodes; Conducting materials; Crystalline materials; Degradation; Electron emission; Electron microscopy; Pollution measurement; Silicon; Surface treatment; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
  • Conference_Location
    St. Petersburg
  • Print_ISBN
    0-7803-3594-5
  • Type

    conf

  • DOI
    10.1109/IVMC.1996.601799
  • Filename
    601799
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3291237