Bound-to-continuum transition in GaAs/AlGaAs QWIP

Author

Das, Manab Kr ; Billaha, Md Aref

Author_Institution

Dept. of Electron. Eng., Indian Sch. of Mines, Dhanbad, India

fYear

2012

fDate

13-16 Dec. 2012

Firstpage

1

Lastpage

3

Abstract

In this paper, performance of GaAs/Al_xGa_1-xAs long wavelength quantum well infrared photodetector (LW-QWIP) is investigated using device simulation software APSYS. Basic physical quantities like band diagram, wave function, absorption coefficient as well as performance characteristics such as photocurrent and dark current are obtained for bound to continuum intersubband transition of QWIP. Simulated result shows that Peak absorption coefficient of 593.63 cm^-1 is obtained at wavelength of 8.799 μm which is in good agreement with the experimental data.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; photodetectors; quantum well devices; GaAs-Al_xGa_1-xAs; QWIP; absorption coefficient; band diagram; bound-to-continuum transition; dark current; intersubband transition; long wavelength quantum well infrared photodetector; performance characteristics; photocurrent; wave function; Absorption; Dark current; Gallium arsenide; Performance evaluation; Photoconductivity; Photodetectors; Infrared Detectors; Intersubband absorption; Quantum wells; dark current;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics Global Conference (PGC), 2012

Conference_Location

Singapore

Print_ISBN

978-1-4673-2513-4

Type

conf

DOI

10.1109/PGC.2012.6458052

Filename

6458052