Title :
Bound-to-continuum transition in GaAs/AlGaAs QWIP
Author :
Das, Manab Kr ; Billaha, Md Aref
Author_Institution :
Dept. of Electron. Eng., Indian Sch. of Mines, Dhanbad, India
Abstract :
In this paper, performance of GaAs/AlxGa1-xAs long wavelength quantum well infrared photodetector (LW-QWIP) is investigated using device simulation software APSYS. Basic physical quantities like band diagram, wave function, absorption coefficient as well as performance characteristics such as photocurrent and dark current are obtained for bound to continuum intersubband transition of QWIP. Simulated result shows that Peak absorption coefficient of 593.63 cm-1 is obtained at wavelength of 8.799 μm which is in good agreement with the experimental data.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; photodetectors; quantum well devices; GaAs-AlxGa1-xAs; QWIP; absorption coefficient; band diagram; bound-to-continuum transition; dark current; intersubband transition; long wavelength quantum well infrared photodetector; performance characteristics; photocurrent; wave function; Absorption; Dark current; Gallium arsenide; Performance evaluation; Photoconductivity; Photodetectors; Infrared Detectors; Intersubband absorption; Quantum wells; dark current;
Conference_Titel :
Photonics Global Conference (PGC), 2012
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-2513-4
DOI :
10.1109/PGC.2012.6458052
