Ultra low-noise highly linear integrated 1.5 to 2.7 GHz LNA

Author

Jingshi Yao ; Xiaopeng Sun ; Lin, Bo

Author_Institution

TriQuint Semicond., San Jose, CA, USA

fYear

2013

fDate

14-18 April 2013

Firstpage

1

Lastpage

4

Abstract

This paper presents a wideband, fully integrated, low-noise amplifier with a noise figure of less than 0.5 dB. The device is fabricated in a 0.35 μm GaAs enhancement-mode pHEMT process because of its positive threshold voltage and superior noise performance. The amplifier is housed in a low-cost 2×2 mm² 8-pin QFN plastic package with internal gate biasing and input and output matching. To our knowledge, this work achieved the best result of reported combination of low noise figure, OIP3 (40 dBm), and Linearity Figure of Merit (LFOM) of 15dB at a frequency range of 1.5-2.7GHz for sub-0.5 dB NF LNA, and integrated power-down function for system control.

Keywords

HEMT integrated circuits; III-V semiconductors; UHF amplifiers; gallium arsenide; integrated circuit manufacture; low noise amplifiers; wideband amplifiers; GaAs; LNA; QFN plastic package; figure of merit; frequency 1.5 GHz to 2.7 GHz; input matching; low noise amplifiers; noise figure; output matching; pHEMT; size 0.35 mum; wideband amplifier; Circuit stability; Gain; Linearity; Logic gates; Low-noise amplifiers; Noise; Noise figure; GaAs E-pHEMT; high gain; high linearity; ultra low noise amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Symposium (IWS), 2013 IEEE International

Conference_Location

Beijing

Type

conf

DOI

10.1109/IEEE-IWS.2013.6616720

Filename

6616720