Title :
Ultra low-noise highly linear integrated 1.5 to 2.7 GHz LNA
Author :
Jingshi Yao ; Xiaopeng Sun ; Lin, Bo
Author_Institution :
TriQuint Semicond., San Jose, CA, USA
Abstract :
This paper presents a wideband, fully integrated, low-noise amplifier with a noise figure of less than 0.5 dB. The device is fabricated in a 0.35 μm GaAs enhancement-mode pHEMT process because of its positive threshold voltage and superior noise performance. The amplifier is housed in a low-cost 2×2 mm2 8-pin QFN plastic package with internal gate biasing and input and output matching. To our knowledge, this work achieved the best result of reported combination of low noise figure, OIP3 (40 dBm), and Linearity Figure of Merit (LFOM) of 15dB at a frequency range of 1.5-2.7GHz for sub-0.5 dB NF LNA, and integrated power-down function for system control.
Keywords :
HEMT integrated circuits; III-V semiconductors; UHF amplifiers; gallium arsenide; integrated circuit manufacture; low noise amplifiers; wideband amplifiers; GaAs; LNA; QFN plastic package; figure of merit; frequency 1.5 GHz to 2.7 GHz; input matching; low noise amplifiers; noise figure; output matching; pHEMT; size 0.35 mum; wideband amplifier; Circuit stability; Gain; Linearity; Logic gates; Low-noise amplifiers; Noise; Noise figure; GaAs E-pHEMT; high gain; high linearity; ultra low noise amplifier;
Conference_Titel :
Wireless Symposium (IWS), 2013 IEEE International
Conference_Location :
Beijing
DOI :
10.1109/IEEE-IWS.2013.6616720
