• DocumentCode
    329142
  • Title

    A New Etching Method For Single Crystal Al2O3 Film On Si Using Si Ion Implantation

  • Author

    Ishida, Makoto ; Kim, Hoon ; Kimura, Takayuki ; Nakamura, Tetsuro

  • Author_Institution
    Toyohashi Unliv of Technology
  • Volume
    1
  • fYear
    1995
  • fDate
    25-29 Jun 1995
  • Firstpage
    87
  • Lastpage
    90
  • Keywords
    Acceleration; Actuators; Chemical vapor deposition; Crystallization; Etching; Ion implantation; Semiconductor films; Stability; Surface contamination; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Sensors and Actuators, 1995 and Eurosensors IX.. Transducers '95. The 8th International Conference on
  • Print_ISBN
    91-630-3473-5
  • Type

    conf

  • DOI
    10.1109/SENSOR.1995.717097
  • Filename
    717097
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=329142