Title :
A new physics-based, predictive compact model for small-geometry MOSFET´s including two-dimensional calculations with a close link to process and layout data
Author :
Klos, A. ; Kostka, A.
Author_Institution :
Solid-State Electron. Lab., Tech. Hochschule Darmstadt, Germany
Abstract :
A new analytical, physics-based compact model for small-geometry MOSFET´s is presented, which was derived under use of a specially developed two-dimensional technique for the solution of Poisson´s equation together with a new way to solve for MOS current equations. Comparison of our model with numerical device simulations and measurements show an outstanding predictive ability.
Keywords :
MOSFET; semiconductor device models; MOS current equations; Poisson equation; layout data; physics-based model; predictive compact model; small-geometry MOSFET; two-dimensional calculations; Analytical models; Circuit simulation; Geometry; MOS devices; MOSFET circuits; Numerical simulation; Poisson equations; Predictive models; Solid modeling; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553142
